A reduced electron-extraction barrier at an interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layer
Identifieur interne : 001198 ( Main/Repository ); précédent : 001197; suivant : 001199A reduced electron-extraction barrier at an interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layer
Auteurs : RBID : Pascal:13-0112108Descripteurs français
- Pascal (Inist)
- Addition étain, Couche ITO, Phénomène transitoire, Effet photoélectrique, Effet photovoltaïque, Champ interne, Courant fuite, Cellule solaire, Etude théorique, Courbure bande, Dipôle, Cathode, Revêtement protecteur, Optoélectronique, Dispositif optoélectronique, Cellule solaire organique, Interface, Polymère, Thiophène dérivé polymère, Oxyde d'indium, Verre, Ester, Acide butyrique, Composé du fullerène, Structure cellulaire, Matériau cellulaire, Matériau composite, Couche tampon, Matériau dopé, 8105L, 8105K, 8105T, 8460J, ITO.
- Wicri :
- concept : Polymère, Verre, Matériau composite.
English descriptors
- KwdEn :
- Band bending, Buffer layer, Butyric acid, Cathode, Cell structure, Cellular material, Composite material, Dipole, Doped materials, Ester, Fullerene compounds, Glass, ITO layers, Indium oxide, Interface, Internal field, Leakage current, Optoelectronic device, Optoelectronics, Organic solar cells, Photoelectric effect, Photovoltaic effect, Polymer, Protective coatings, Solar cell, Theoretical study, Thiophene derivative polymer, Tin addition, Transients.
Abstract
Roles of the buried interface between polymer poly(3-hexylthiophene) (P3HT) layer and indium tin oxide (ITO) on the glass substrate have been characterized by transient photovoltage (TPV). Since P3HT is the hole-transporting material, from intuitiveness, ITO/P3HT contact (IPcontact) tends to be hole extracting. However, in this letter, the negative TPV of ITO/P3HT/Al demonstrates that IPcontact dominates the reversed built in electric field, namely pointing from ITO to Al, and is confirmed to be electron extracting. Meanwhile, an interesting biphasic feature of TPV is demonstrated in a device of ITO/P3HT:[6,6]-phenyl-C61-butyric acid methyl ester/Al. The negative component in biphasic TPV shows that IPcontact is one reason resulting in the leakage current for P3HT based solar cells in normal structures. The theoretical study is conducted, and reveals that the interaction between P3HT and ITO reduces electron barrier by 0.5 eV for IPcontact. Band bending and dipole formation are two possible reasons to reduce the electron barrier. By taking advantage of the electron extraction, IPcontact is employed as a composite cathode in an inverted solar cell by pre-coating a pristine P3HT buffer layer between a blended layer and ITO. The study paves a way to characterize the buried interface in solution processable optoelectronics by observing polarity change of TPV, and to fabricate the simplified inverted organic solar cell employing IPcontact to extract electrons.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A reduced electron-extraction barrier at an interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layer</title><author><name sortKey="Ding, Bao Fu" uniqKey="Ding B">Bao-Fu Ding</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road</s1><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road</wicri:noRegion></affiliation></author><author><name sortKey="Choy, Wallace C H" uniqKey="Choy W">Wallace C. H. Choy</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road</s1><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road</wicri:noRegion></affiliation></author><author><name sortKey="Kwok, Wai Ming" uniqKey="Kwok W">Wai-Ming Kwok</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University</s1><s2>Hungham</s2><s3>HKG</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Hungham</wicri:noRegion></affiliation></author><author><name>YAO YAO</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Key Laboratory of Surface Physics, Fudan Universiry</s1><s2>Shanghai 200433</s2><s3>CHN</s3><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200433</wicri:noRegion></affiliation></author><author><name sortKey="Ho, Keith Y F" uniqKey="Ho K">Keith Y. F. Ho</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University</s1><s2>Hungham</s2><s3>HKG</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Hungham</wicri:noRegion></affiliation></author><author><name sortKey="Wu, Chang Qin" uniqKey="Wu C">Chang-Qin Wu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Key Laboratory of Surface Physics, Fudan Universiry</s1><s2>Shanghai 200433</s2><s3>CHN</s3><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 200433</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0112108</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0112108 INIST</idno><idno type="RBID">Pascal:13-0112108</idno><idno type="wicri:Area/Main/Corpus">001161</idno><idno type="wicri:Area/Main/Repository">001198</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band bending</term><term>Buffer layer</term><term>Butyric acid</term><term>Cathode</term><term>Cell structure</term><term>Cellular material</term><term>Composite material</term><term>Dipole</term><term>Doped materials</term><term>Ester</term><term>Fullerene compounds</term><term>Glass</term><term>ITO layers</term><term>Indium oxide</term><term>Interface</term><term>Internal field</term><term>Leakage current</term><term>Optoelectronic device</term><term>Optoelectronics</term><term>Organic solar cells</term><term>Photoelectric effect</term><term>Photovoltaic effect</term><term>Polymer</term><term>Protective coatings</term><term>Solar cell</term><term>Theoretical study</term><term>Thiophene derivative polymer</term><term>Tin addition</term><term>Transients</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition étain</term><term>Couche ITO</term><term>Phénomène transitoire</term><term>Effet photoélectrique</term><term>Effet photovoltaïque</term><term>Champ interne</term><term>Courant fuite</term><term>Cellule solaire</term><term>Etude théorique</term><term>Courbure bande</term><term>Dipôle</term><term>Cathode</term><term>Revêtement protecteur</term><term>Optoélectronique</term><term>Dispositif optoélectronique</term><term>Cellule solaire organique</term><term>Interface</term><term>Polymère</term><term>Thiophène dérivé polymère</term><term>Oxyde d'indium</term><term>Verre</term><term>Ester</term><term>Acide butyrique</term><term>Composé du fullerène</term><term>Structure cellulaire</term><term>Matériau cellulaire</term><term>Matériau composite</term><term>Couche tampon</term><term>Matériau dopé</term><term>8105L</term><term>8105K</term><term>8105T</term><term>8460J</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term><term>Verre</term><term>Matériau composite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Roles of the buried interface between polymer poly(3-hexylthiophene) (P3HT) layer and indium tin oxide (ITO) on the glass substrate have been characterized by transient photovoltage (TPV). Since P3HT is the hole-transporting material, from intuitiveness, ITO/P3HT contact (IPcontact) tends to be hole extracting. However, in this letter, the negative TPV of ITO/P3HT/Al demonstrates that IPcontact dominates the reversed built in electric field, namely pointing from ITO to Al, and is confirmed to be electron extracting. Meanwhile, an interesting biphasic feature of TPV is demonstrated in a device of ITO/P3HT:[6,6]-phenyl-C61-butyric acid methyl ester/Al. The negative component in biphasic TPV shows that IPcontact is one reason resulting in the leakage current for P3HT based solar cells in normal structures. The theoretical study is conducted, and reveals that the interaction between P3HT and ITO reduces electron barrier by 0.5 eV for IPcontact. Band bending and dipole formation are two possible reasons to reduce the electron barrier. By taking advantage of the electron extraction, IPcontact is employed as a composite cathode in an inverted solar cell by pre-coating a pristine P3HT buffer layer between a blended layer and ITO. The study paves a way to characterize the buried interface in solution processable optoelectronics by observing polarity change of TPV, and to fabricate the simplified inverted organic solar cell employing IPcontact to extract electrons.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A reduced electron-extraction barrier at an interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layer</s1></fA08><fA11 i1="01" i2="1"><s1>DING (Bao-Fu)</s1></fA11><fA11 i1="02" i2="1"><s1>CHOY (Wallace C. H.)</s1></fA11><fA11 i1="03" i2="1"><s1>KWOK (Wai-Ming)</s1></fA11><fA11 i1="04" i2="1"><s1>YAO YAO</s1></fA11><fA11 i1="05" i2="1"><s1>HO (Keith Y. F.)</s1></fA11><fA11 i1="06" i2="1"><s1>WU (Chang-Qin)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road</s1><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University</s1><s2>Hungham</s2><s3>HKG</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>State Key Laboratory of Surface Physics, Fudan Universiry</s1><s2>Shanghai 200433</s2><s3>CHN</s3><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>457-463</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000503710470040</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>32 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0112108</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Roles of the buried interface between polymer poly(3-hexylthiophene) (P3HT) layer and indium tin oxide (ITO) on the glass substrate have been characterized by transient photovoltage (TPV). Since P3HT is the hole-transporting material, from intuitiveness, ITO/P3HT contact (IPcontact) tends to be hole extracting. However, in this letter, the negative TPV of ITO/P3HT/Al demonstrates that IPcontact dominates the reversed built in electric field, namely pointing from ITO to Al, and is confirmed to be electron extracting. Meanwhile, an interesting biphasic feature of TPV is demonstrated in a device of ITO/P3HT:[6,6]-phenyl-C61-butyric acid methyl ester/Al. The negative component in biphasic TPV shows that IPcontact is one reason resulting in the leakage current for P3HT based solar cells in normal structures. The theoretical study is conducted, and reveals that the interaction between P3HT and ITO reduces electron barrier by 0.5 eV for IPcontact. Band bending and dipole formation are two possible reasons to reduce the electron barrier. By taking advantage of the electron extraction, IPcontact is employed as a composite cathode in an inverted solar cell by pre-coating a pristine P3HT buffer layer between a blended layer and ITO. The study paves a way to characterize the buried interface in solution processable optoelectronics by observing polarity change of TPV, and to fabricate the simplified inverted organic solar cell employing IPcontact to extract electrons.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="X"><s0>001D05C</s0></fC02><fC02 i1="04" i2="X"><s0>001D03G02C2</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Addition étain</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Tin addition</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Adición estaño</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche ITO</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>ITO layers</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Phénomène transitoire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Transients</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Fenómeno 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l="SPA"><s0>Célula solar</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Etude théorique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Theoretical study</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Estudio teórico</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Courbure bande</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Band bending</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Curvatura banda</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Dipôle</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Dipole</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Dipolo</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Cathode</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Cathode</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Cátodo</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Revêtement protecteur</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Protective 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i2="X" l="ENG"><s0>Polymer</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Polímero</s0><s5>23</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>25</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Indium oxide</s0><s5>25</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Indio óxido</s0><s5>25</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Verre</s0><s5>26</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Glass</s0><s5>26</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Vidrio</s0><s5>26</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Acide butyrique</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Butyric acid</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Butírico ácido</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Composé du fullerène</s0><s5>29</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Fullerene compounds</s0><s5>29</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Structure cellulaire</s0><s5>30</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Cell structure</s0><s5>30</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Estructura celular</s0><s5>30</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Matériau cellulaire</s0><s5>31</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Cellular material</s0><s5>31</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Material celular</s0><s5>31</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Matériau composite</s0><s5>32</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Composite material</s0><s5>32</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Material compuesto</s0><s5>32</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Couche tampon</s0><s5>33</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Buffer layer</s0><s5>33</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Capa tampón</s0><s5>33</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>8105L</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>8105K</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>8105T</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="33" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>59</s5></fC03><fC03 i1="34" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>084</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0112108
|texte= A reduced electron-extraction barrier at an interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layer
}}
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